GB/T 8756-2018
锗晶体缺陷图谱
Collection of metallographs on defects of germanium crystal
- 实施日期
- 2019-07-01
- ICS 分类
- 29.045
组合使用关键词、标准类型、状态与 ICS 分类,快速定位所需国家标准。
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GB/T 8756-2018
Collection of metallographs on defects of germanium crystal
GB/T 37053-2018
General specification for epitaxial wafers and substrates based on gallium nitride
GB/T 37051-2018
Test method for determination of crystal defect density in PV silicon ingot and wafer
GB/T 14844-2018
Designations of semiconductor materials
GB/T 36706-2018
Polycrystalline indium phosphide
GB/T 26071-2018
Monocrystalline silicon wafers for solar cells
GB/T 25076-2018
Monocrystalline silicon for solar cell
GB/T 12965-2018
Monocrystalline silicon as cut wafers and lapped wafers
GB/T 12964-2018
Monocrystalline silicon polished wafers
GB/T 2881-2014
GB/T 35316-2017
Collection of metallographs on defects of sapphire crystal
GB/T 35310-2017
200mm silicon epitaxial wafer
GB/T 35308-2017
Epitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cell
GB/T 35307-2017
Granular polysilicon produced by fluidized bed method
GB/T 35305-2017
Monocrystalline gallium arsenide polished wafers for solar cell
GB/T 25074-2017
Solar-grade polycrystalline silicon
GB/T 34479-2017
Specification for alphanumeric marking of silicon wafers
GB/T 32651-2016
Test method for measuring trace elements in photovoltaic-grade silicon by high-mass resolution glow discharge mass spectrometry
GB/T 32573-2016
Silicon powder—Determination of total carbon content—Infrared absorption method after combustion in an induction furnace
GB/T 12962-2015
Monocrystalline silicon