GB/T 17864-1999
关键尺寸(CD)计量方法
CD Metrology procedures
- 实施日期
- 2000-06-01
- ICS 分类
- 31.200
组合使用关键词、标准类型、状态与 ICS 分类,快速定位所需国家标准。
找到 1,403 条
GB/T 17864-1999
CD Metrology procedures
GB/T 12560-1999
Semiconductor devices--Sectional specification for discrete devices
GB/T 9043-1999
General technical requirements of gas discharge tubes for the over-voltage protection of telecommunications installations
GB/T 17564.3-1999
Standard data element types with associated classification scheme for electric components--Part 3:Maintenance and validation procedures
GB/T 7576-1998
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section Four:Blank detail specification for case-rated bipolartransistors for high-frequency amplification
GB/T 6217-1998
Semiconductor devices--Discrete devices--Part 7:Bipolar transistors--Section One:Blank detail speci-fication for ambient-rated bipolar transistors for low and high frequency amplification
GB/T 17574-1998
Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits
GB/T 17573-1998
Semiconductor devices--Discrete devices and integrated circuits--Part 1:General
GB/T 17572-1998
Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Four:Family specification for complementary MOS digital integrated circuits,series 4000B and 4000UB
GB/T 6590-1998
Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100A
GB/T 6352-1998
Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A
GB/T 6219-1998
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
GB/T 6351-1998
Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes),ambient and case-rated,up to 100A
GB/T 9424-1998
Semiconductor devices--Integrated circuits--Part 2:Digital integrated circuits--Section Five:Blank detail specification for complementary MOS digital inte-grated circuits,series 4000B and 4000UB
GB/T 17562.1-1998
Rectangular connectors for frequencies below 3 MHz--Part 1: Generic specification--General requirements and guide for the preparation of detail specifications for connectors with assessed quality
GB/T 6261-1998
Fixed capacitors for use in electronic equipment--Part 5:Sectional specification--Fixed mica dielectric d.c.capacitors witha rated voltage not exceeding 3000V--Selection of methods of test and generalrequirements
GB/T 13420-1998
Electromechanical switches for use in electronic equipment--Part 6:Sectional specification for sensitive switches--Section 1:Blank detail specification
GB/T 13419-1998
Electromechanical switches for use in electronic equipment--Part 6:Sectional specification for sensitive switches
GB/T 6262-1998
Fixed capacitors for use in electronic equipment--Part 5:Blank detail specification--Fixed mica dielectric d.c.capacitors witha rated voltage not exceeding 3000V--Assessment level E
GB/T 17444-1998
The technical norms for measurementand test of characteristic parameters of infrared focal plane arrays