GB/T 32277-2015
硅的仪器中子活化分析测试方法
Test method for instrumental neutron activation analysis (INAA) of silicon
- 实施日期
- 2017-01-01
- ICS 分类
- 29.045
组合使用关键词、标准类型、状态与 ICS 分类,快速定位所需国家标准。
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GB/T 32277-2015
Test method for instrumental neutron activation analysis (INAA) of silicon
GB/T 32279-2015
Specification for order entry format of silicon wafers
GB/T 31854-2015
Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
GB/T 31476-2015
Requirements for solders for high-quality interconnections in electronics assembly
GB/T 31475-2015
Requirements for solder paste for high-quality interconnections in electronics assembly
GB/T 31474-2015
Soldering fluxes for high-quality interconnections in electronics assembly
GB/T 30656-2014
Polished monocrystalline silicon carbide wafers
GB/T 30652-2014
Trichlorosilane for silicon epitaxial
GB/T 12963-2014
Electronic-grade polycrystalline silicon
GB/T 13389-2014
Practice for conversion between resistivity and dopant density for boron-doped, phosphorus-doped, and arsenic-doped silicon
GB/T 31092-2014
Monocrystalline sapphire ingot
GB/T 2881-2014
Silicon metal
GB/T 30861-2014
Germanium substrate for solar cell
GB/T 30858-2014
Polished mono-crystalline sapphire substrate product
GB/T 30856-2014
GaAs substrates for LED epitaxial chips
GB/T 30855-2014
GaP substrates for LED epitaxial chips
GB/T 30854-2014
Gallium nitride based epitaxial layer for LED lighting
GB/T 30868-2014
Test method for measuring micropipe density of monocrystalline silicon carbide wafers―Chemically etching
GB/T 30867-2014
Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers
GB/T 30866-2014
Test method for measuring diameter of monocrystalline silicon carbide wafers