GB/T 26066-2010
硅晶片上浅腐蚀坑检测的测试方法
practice for shallow etch pit detection on silicon
- 实施日期
- 2011-10-01
- ICS 分类
- 29.045
组合使用关键词、标准类型、状态与 ICS 分类,快速定位所需国家标准。
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GB/T 26066-2010
practice for shallow etch pit detection on silicon
GB/T 14847-2010
Test mothod for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance
GB/T 25076-2010
Monocrystalline silicon of solar cell
GB/T 25075-2010
Gallium arsenide single crystal for solar cell
GB/T 25074-2010
Solar-grade polycrystalline silicon
GB/T 14139-2009
Silicon epitaxial wafers
GB/T 11072-2009
Indium antimonide polycrystal,single crystals and as-cut slices
GB/T 6616-2009
Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
GB/T 6619-2009
Test methods for bow of silicon wafers
GB/T 6620-2009
Test method for measuring warp on silicon slices by noncontact scanning
GB/T 24581-2009
Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities
GB/T 24580-2009
Test method for measuring boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry
GB/T 24579-2009
Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy
GB/T 24577-2009
Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography
GB/T 24576-2009
Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction
GB/T 24575-2009
Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry
GB/T 24574-2009
Test methods for photoluminescence analysis of single crystal silicon for III-V impurities
GB/T 1558-2009
Test method for substitutional atomic carbon concent of silicon by infrared absorption
GB/T 1551-2009
Test method for measuring resistivity of monocrystal silicon
GB/T 14144-2009
Testing method for determination of radial interstitial oxygen variation in silicon