GB/T 4937.21-2018
半导体器件 机械和气候试验方法 第21部分:可焊性
Semiconductor devices—Mechanical and climatic test methods—Part 21: Solderability
- 实施日期
- 2019-01-01
- ICS 分类
- 31.080.01
组合使用关键词、标准类型、状态与 ICS 分类,快速定位所需国家标准。
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GB/T 4937.21-2018
Semiconductor devices—Mechanical and climatic test methods—Part 21: Solderability
GB/T 4937.20-2018
Semiconductor devices—Mechanical and climatic test methods—Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat
GB/T 4937.201-2018
Semiconductor devices—Mechanical and climatic test methods—Part 20-1: Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat
GB/T 4937.19-2018
Semiconductor devices—Mechanical and climatic test methods—Part 19: Die shear strength
GB/T 4937.18-2018
Semiconductor devices—Mechanical and climatic test methods—Part 18: Ionizing radiation (total dose)
GB/T 4937.17-2018
Semiconductor devices—Mechanical and climatic test methods—Part 17: Neutron irradiation
GB/T 4937.15-2018
Semiconductor devices—Mechanical and climatic test methods—Part 15: Resistance to soldering temperature for through-hole mounted devices
GB/T 4937.14-2018
Semiconductor devices—Mechanical and climatic test methods—Part 14: Robustness of terminations(lead integrity)
GB/T 4937.13-2018
Semiconductor devices—Mechanical and climatic test methods—Part 13: Salt atmosphere
GB/T 4937.12-2018
Semiconductor devices—Mechanical and climatic test methods—Part 12: Vibration, variable frequency
GB/T 4937.11-2018
Semiconductor devices—Mechanical and climatic test methods—Part 11: Rapid change of temperature—Two-fluid-bath method
GB/T 36655-2018
Test method for alpha crystalline silicon dioxide content of spherical silica powder for electronic packaging—XRD method
GB/T 36652-2018
Specification for TFT liquid crystal mixtures
GB/T 36648-2018
Specification for TFT liquid crystal monomers
GB/T 36647-2018
Specification for liquid crystal monomers
GB/T 36646-2018
Equipment for preparation of nitride semiconductor materials by hydride vapor phase epitaxy
GB/T 36614-2018
Integrated circuits—Memory devices pin configuration
GB/T 36613-2018
Probe test method for light emitting diode chips
GB/T 36595-2018
Nanoscale barium titanate
GB/T 15879.5-2018
Mechanical standardization of semiconductor devices—Part 5: Recommendations applying to tape automated bonding(TAB) of integrated circuits