GB/T 17573-1998
半导体器件 分立器件和集成电路 第1部分:总则
Semiconductor devices--Discrete devices and integrated circuits--Part 1:General
- 实施日期
- 1999-06-01
- ICS 分类
- 31.080.01
组合使用关键词、标准类型、状态与 ICS 分类,快速定位所需国家标准。
找到 166 条
GB/T 17573-1998
Semiconductor devices--Discrete devices and integrated circuits--Part 1:General
GB/T 6590-1998
Semiconductor devices--Discrete devices--Part6:Thyristors--Section Two:Blank detail specification for bidirectional triode thyristors(triacs),ambient or case-rated,up to 100A
GB/T 6352-1998
Semiconductor devices--Discrete devices--Part 6:Thyristors--Section One:Blank detail specification for reverse blocking triode thyristors,ambient or case-rated,up to 100A
GB/T 6219-1998
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors--Section One:Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz
GB/T 6351-1998
Semiconductor devices--Discrete devices--Part 2:Rectifier diodes--Section One:Blank detail specification for rectifier diodes(including avalanche recti fier diodes),ambient and case-rated,up to 100A
GB/T 17008-1997
Terminology and letter symbols for insulated-gate bipolar transistor
GB/T 16894-1997
Blank detail specification for rectifier diodes (including avalanche rectifier diodes),ambient and case-rated,for currents greater than 100A
GB/T 7577-1996
Blank detail specification for case-rated bipolar transistors for low-frequency amplification
GB/T 6218-1996
Blank detail specification for bipolar transistors for switching applications
GB/T 6428-1995
Methods of the measurement for hydrogen thyratron tubes
GB/T 6571-1995
Semiconductordevices--Discrete devices--Part 3:Signal(including switching)and regulator diodes
GB/T 15529-1995
Blank detail specification for LED numeric displays
GB/T 15449-1995
Blank detail-specification for field-effect transistors for case-rated switching application
GB/T 4587-1994
Semiconductor discrete devices and integrated circuits--Part 7:Bipolar transistors
GB/T 4586-1994
Semiconductor devices--Discrete devices--Part 8:Field-effect transistors
GB/T 15293-1994
Measuring methods for thyristor--Gate turn-off thyristor
GB/T 15292-1994
Measuring methods for thyristor--Reverse conducting triode thyristor
GB/T 13153-1991
Blank detail specification for gate turn-off thyristors,ambient or case-rated,5A and above
GB/T 13152-1991
Blank detail specification for reverse conducting triode thyristors,ambient or case-rated,5A/5A and above
GB/T 12847-1991
Blank detail specification for hydrogen thyratrons