GB/T 47752-2026
Micro-electromechanical systems (MEMS) technology—Test method of electrical characteristics after cyclic bending deformation for flexible micro-electromechanical devices
- 实施日期
- 2027-02-01
- ICS 分类
- 31.080.99
GB/T 47768-2026
Micro-electromechanical systems (MEMS) technology—Bond strength test for glass frit bonded structures using micro-chevron-tests (MCT)
- 实施日期
- 2027-02-01
- ICS 分类
- 31.080.99
GB/T 47749-2026
Micro-electromechanical system (MEMS) technology—Test method for coefficient of linear thermal expansion of micro-electromechanical solid-state material
- 实施日期
- 2026-11-01
- ICS 分类
- 31.080.99
GB/T 47667-2026
Bypass thyristors of converter valves for high-voltage direct current power transmission using voltage sourced converters
- 实施日期
- 2027-02-01
- ICS 分类
- 31.080.20
GB/T 47767-2026
Micro-electromechanical systems (MEMS) technology—Measurement methods of electro-mechanical conversion characteristics of piezoelectric MEMS cantilever
- 实施日期
- 2027-02-01
- ICS 分类
- 31.080.99
GB/T 46567.2-2026
Intelligent computing—Test method for memristor—Part 2:Linearity
- 实施日期
- 2026-11-01
- ICS 分类
- 31.080.99
GB/T 4023.3-2026
Discrete semiconductor devices—Part 3: Signal, switching and regulator diodes
- 实施日期
- 2026-11-01
- ICS 分类
- 31.080.10
GB/T 20521.1-2026
Semiconductor devices—Part 14-1: Semiconductor sensors—Generic specification for sensors
- 实施日期
- 2026-11-01
- ICS 分类
- 31.080.01
GB/T 47562-2026
Micro-electromechanical systems (MEMS) technology—MEMS silicon piezoresistive pressure and temperature composite pressure sensor chip
- 实施日期
- 2026-08-01
- ICS 分类
- 31.080.99
GB/T 4023.4-2026
Discrete semiconductor devices—Part 4: Microwave diodes and transistors
- 实施日期
- 2026-11-01
- ICS 分类
- 31.080.10;31.080.30
GB/T 4937.201-2026
Semiconductor devices—Mechanical and climatic test methods—Part 20-1:Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat
- 实施日期
- 2026-11-01
- ICS 分类
- 31.080.01
GB/T 45716.1-2026
Semiconductor devices—Bias-temperature instability test for metal-oxide semiconductor field-effect transistors (MOSFETs)—Part 1: Fast bias-temperature instability test for MOSFETs
- 实施日期
- 2026-11-01
- ICS 分类
- 31.080.30
GB/T 15651.4-2026
Semiconductor devices—Part 5-4: Optoelectronic devices—Semiconductor lasers
- 实施日期
- 2026-11-01
- ICS 分类
- 31.080;31.260
GB/T 7581-2026
Dimensions of outlines for discrete semiconductor devices
- 实施日期
- 2026-10-01
- ICS 分类
- 31.080.01
GB/T 7576-2026
Discrete semiconductor devices—Blank detail specification for high power bipolar transistors
- 实施日期
- 2026-10-01
- ICS 分类
- 31.080.30
GB/T 6217-2026
Discrete semiconductor devices—Blank detail specification for low power bipolar transistors
- 实施日期
- 2026-10-01
- ICS 分类
- 31.080.30
GB/T 4023.1-2026
Discrete semiconductor devices—Part 1: Sectional specification
- 实施日期
- 2026-10-01
- ICS 分类
- 31.080.01
GB/T 11499-2026
Letter symbols for discrete semiconductor devices
- 实施日期
- 2026-10-01
- ICS 分类
- 31.080.01
GB/T 17573-2026
Semiconductor devices—General
- 实施日期
- 2026-10-01
- ICS 分类
- 31.080.01
GB/T 47239.9-2026
Semiconductor devices—Flexible and stretchable semiconductor devices—Part 9: Performance testing methods of one transistor and one resistor (1T1R) resistive memory cells
- 实施日期
- 2026-09-01
- ICS 分类
- 31.080.99