GB/T 22638.1-2008
铝箔试验方法 第1部分:厚度的测定 重量法
Test methods for aluminium and aluminium alloy foils - Part 1: Determination of thickness by gravimetric method
- 实施日期
- 2009-11-01
- ICS 分类
- 77.040.01
组合使用关键词、标准类型、状态与 ICS 分类,快速定位所需国家标准。
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GB/T 22638.1-2008
Test methods for aluminium and aluminium alloy foils - Part 1: Determination of thickness by gravimetric method
GB/T 22638.10-2008
Test methods for aluminium and aluminium alloy foils - Part 10: Determination of mass per unit area (surface density) of coatings
GB/T 21839-2008
Steel for prestressed concrete - Test methods
GB/T 18876.3-2008
Standard practice for determining the metallographical constituent and inclusion content of steels and other metals by automatic image analysis - Part 3: Determining the carbides rating in steels by automatic image analysis and stereology
GB/T 21546-2008
Critical current measurement - DC critical current of Nb-Ti composite superconductors
GB/T 10567.2-2007
Wrought copper and copper alloys - Detection of residual stress - Ammonia test
GB/T 4060-2007
Polycrystalline silicon - examination method - vacuum zone - melting on boron
GB/T 4059-2007
Polycrystalline silicon - examination method - zone - melting on phosphorus under controlled atomosphere
GB/T 11073-2007
Standard method for measuring radial resistivity variation on silicon slices
GB/T 18876.2-2006
Standard practice for determining the metallographical constituent and inclusion content of steels and other metals by automatic image analysis - Part 2: Determining the inclusion ratings of steels by automatic image analysis and stereology
GB/T 8760-2006
Gallium arsenide single crystal-determination of dislocation density
GB/T 8758-2006
Measuring thickness of epitaxial layers of gallium arsenide by infrared interference
GB/T 8757-2006
Determination of carrier concentration in gallium arsenide by the plasma resonance minimum
GB/T 5252-2006
Germanium monocrystal - inspection of dislocation etch pit density
GB/T 4326-2006
Extrinsic semiconductor single crystals measurement of Hall mobility and Hall coefficient
GB/T 1557-2006
The method of determining interstitial oxygen content in silicon by infrared absorption
GB/T 11068-2006
Gallium arsenide epitaxial layer - determination of carrier concentration voltage-capacitance method
GB/T 19922-2005
Standard test methods for measuring site flatness on silicon wafers by noncontact scanning
GB/T 19921-2005
Test method of particles on silicon wafer surfaces
GB/T 6148-2005
Test method for temperature-resistance coefficient of precision resistance alloys