GB/T 14863-2013
用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法
Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
- 实施日期
- 2014-08-15
- ICS 分类
- 29.045
组合使用关键词、标准类型、状态与 ICS 分类,快速定位所需国家标准。
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GB/T 14863-2013
Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
GB/T 30453-2013
Metallographs collection for original defects of crystalline silicon
GB/T 29852-2013
Test method for measuring Phosphorus, Arsenic and Antimony in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
GB/T 29851-2013
Test method for measuring Boron and Aulminium in silicon materials used for photovoltaic applications by secondary ion mass spectrometry
GB/T 29850-2013
Test method for measuring compensation degree of silicon materials used for photovoltaic applications
GB/T 29849-2013
Test method for measuring surface metallic contamination of silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry
GB/T 29508-2013
300mm monocrystalline silicon as cut slices and grinded slices
GB/T 29506-2013
300mm polished monocrystalline silicon wafers
GB/T 29504-2013
300mm monocrystalline silicon
GB/T 29507-2013
Test method for measuring flatness, thickness and total thickness variation on silicon wafers by automated non-contact scanning
GB/T 29505-2013
Test method for measuring surface roughness on planar surfaces of silicon wafer
GB/T 29055-2012
Multi-crystalline silicon wafer for solar cell
GB/T 29054-2012
Solar-grade casting multi-crystalline silicon brick
GB/T 29057-2012
Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy
GB/T 26072-2010
Germanium single crystal for solar cell
GB/T 26071-2010
Mono-crystalline silicon as cut slices for photovoltaic solar cells
GB/T 26069-2010
Specification for silicon annealed wafers
GB/T 26065-2010
Specification for polished test silicon wafers
GB/T 26068-2010
Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance
GB/T 26067-2010
Standard test method for dimensions of notches on silicon wafers