GB/T 4937.20-2018
Semiconductor devices—Mechanical and climatic test methods—Part 20: Resistance of plastic encapsulated SMDs to the combined effect of moisture and soldering heat
- 实施日期
- 2019-01-01
- ICS 分类
- 31.080.01
GB/T 4937.201-2018
Semiconductor devices—Mechanical and climatic test methods—Part 20-1: Handling, packing, labelling and shipping of surface-mount devices sensitive to the combined effect of moisture and soldering heat
- 实施日期
- 2019-01-01
- ICS 分类
- 31.080.01
GB/T 4937.19-2018
Semiconductor devices—Mechanical and climatic test methods—Part 19: Die shear strength
- 实施日期
- 2019-01-01
- ICS 分类
- 31.080.01
GB/T 4937.18-2018
Semiconductor devices—Mechanical and climatic test methods—Part 18: Ionizing radiation (total dose)
- 实施日期
- 2019-01-01
- ICS 分类
- 31.080.01
GB/T 4937.17-2018
Semiconductor devices—Mechanical and climatic test methods—Part 17: Neutron irradiation
- 实施日期
- 2019-01-01
- ICS 分类
- 31.080.01
GB/T 4937.15-2018
Semiconductor devices—Mechanical and climatic test methods—Part 15: Resistance to soldering temperature for through-hole mounted devices
- 实施日期
- 2019-01-01
- ICS 分类
- 31.080.01
GB/T 4937.14-2018
Semiconductor devices—Mechanical and climatic test methods—Part 14: Robustness of terminations(lead integrity)
- 实施日期
- 2019-01-01
- ICS 分类
- 31.080.01
GB/T 4937.13-2018
Semiconductor devices—Mechanical and climatic test methods—Part 13: Salt atmosphere
- 实施日期
- 2019-01-01
- ICS 分类
- 31.080.01
GB/T 4937.12-2018
Semiconductor devices—Mechanical and climatic test methods—Part 12: Vibration, variable frequency
- 实施日期
- 2019-01-01
- ICS 分类
- 31.080.01
GB/T 4937.11-2018
Semiconductor devices—Mechanical and climatic test methods—Part 11: Rapid change of temperature—Two-fluid-bath method
- 实施日期
- 2019-01-01
- ICS 分类
- 31.080.01
GB/T 249-2017
The rule of type designation for discrete semiconductor devices
- 实施日期
- 2017-12-01
- ICS 分类
- 31.080.01
GB/T 32817-2016
Semiconductor devices—Micro-electromechanical devices—Generic specification for MEMS
- 实施日期
- 2017-03-01
- ICS 分类
- 31.080.99
GB/T 32872-2016
Screening specifications for illumination LEDs in space sciences
- 实施日期
- 2016-11-01
- ICS 分类
- 31.080
GB/T 15291-2015
Semiconductor devices—Part 6: Thyristors
- 实施日期
- 2017-01-01
- ICS 分类
- 31.080.20
GB/T 4023-2015
Semiconductor devices—Discrete devices and integrated circuits— Part 2: Rectifier diodes
- 实施日期
- 2017-01-01
- ICS 分类
- 31.080.10
GB/T 29332-2012
Semiconductor devices - Discrete devices - Part 9: Insulated-gate bipolar transistors(IGBT)
- 实施日期
- 2013-06-01
- ICS 分类
- 31.080.30;31.080.01
GB/T 4937.3-2012
Semiconductor devices - Mechanical and climatic tests methods - Part 3: External visual examination
- 实施日期
- 2013-02-15
- ICS 分类
- 31.080.01
GB/T 4937.4-2012
Semiconductor devices - Mechanical and climatic test methods - Part 4: Damp heat, steady state, highly accelerated stress test (HAST)
- 实施日期
- 2013-02-15
- ICS 分类
- 31.080.01
GB/T 21420-2008
General requirements for light-trigged thyristors for HVDC transmission
- 实施日期
- 2008-09-01
- ICS 分类
- 31.080.20
GB/T 21039.1-2007
Semiconductor devices - Discrete devices - Part 4-1: Microwave diodes and transistors - Microwave field effect transistors - Blank detail specification
- 实施日期
- 2007-11-01
- ICS 分类
- 31.080.30