GB/T 35001-2018
微波电路 噪声源测试方法
Microwave circuits—Measuring methoels for noise source
- 实施日期
- 2018-08-01
- ICS 分类
- 31.200
组合使用关键词、标准类型、状态与 ICS 分类,快速定位所需国家标准。
找到 222 条
GB/T 35001-2018
Microwave circuits—Measuring methoels for noise source
GB/T 35002-2018
Microwave circuits—Measuring methods for frequency source
GB/T 35003-2018
Test methods for endurance and data retention of non-volatile memory
GB/T 35004-2018
Logic digital integrated circuits—Specification for I/O interface model for integrated circuit
GB/T 35010.5-2018
Semiconductor die products—Part 5:Requirements for concerning electrical simulation
GB/T 35006-2018
Semiconductor integrated circuits—Measuring method of level converter
GB/T 35007-2018
Semiconductor integrated circuits—Measuring method of low voltage differential signaling circuitry
GB/T 35008-2018
Specification for serial NOR flash interface
GB/T 35010.8-2018
Semiconductor die products—Part8: EXPRESS model schema for data exchange
GB/T 35010.6-2018
Semiconductor die products—Part 6: Requirements for concerning thermal simulation
GB/T 35010.2-2018
Semiconductor die products—Part 2: Exchange data formats
GB/T 34900-2017
Micro-electromechanical system technology—Measuring method for residual strain measurements of MEMS microstructures using an optical interferometer
GB/T 34899-2017
Micro-electromechanical system technology—Measuring method of microstructure surface stress based on Raman spectroscopy
GB/T 34898-2017
Micro electromechanical system technology—Test method for the nonlinear vibration of the MEMS resonant sensitive element
GB/T 34894-2017
Micro-electromechanical system technology—Measuring method for strain gradient measurements of MEMS microstructures using an optical interferometer
GB/T 34893-2017
Micro-electromechanical system technology—Measuring method for in-plane length measurements of MEMS microstructures using an optical interferometer
GB/T 33929-2017
Test methods of the performance for MEMS high g accelerometer
GB/T 33922-2017
Wafer level test methods for MEMS piezoresistive pressure-sensitive die performances
GB/T 33657-2017
Nanotechnologies—Electrical operating parameter test specification of wafer level nano-scale phase change memory cells
GB/T 32815-2016
Silicon-based MEMS fabrication technology—Specification for criterion of the bulk silicon piezoresistance process