组合使用关键词、标准类型、状态与 ICS 分类，快速定位所需国家标准。
找到 36 条
GB/T 44514-2024
Micro-electromechanical systems (MEMS) technology—Four-point bending test method for interfacial adhesion energy of layered MEMS materials
GB/T 44515-2024
Micro-electromechanical systems (MEMS) technology—Measurement methods of electro-mechanical conversion characteristics of MEMS piezoelectric thin film
GB/T 44531-2024
Micro-electromechanical systems（MEMS）technology—Technical specification of automotive grade pressure sensor based on MEMS technology
GB/T 43493.3-2023
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 3: Test method for defects using photoluminescence
GB/T 43493.2-2023
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 2: Test method for defects using optical inspection
GB/T 43493.1-2023
Semiconductor device—Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices—Part 1: Classification of defects
GB/T 15651.6-2023
Semiconductor devices—Part 5-6: Optoelectronic devices—Light emitting diodes
GB/T 42597-2023
Micro-electromechanical systems technology—Gyroscopes
GB/T 26111-2023
Micro-electromechanical system technology—Terms
GB/T 42191-2023
Test methods of the performances for MEMS piezoresistive pressure-sensitive device
GB/T 42158-2023
Micro-electromechanical systems technology（MEMS） —Description and measurement methods for micro trench and pyramidal needle structures
GB/T 41852-2022
Semiconductor devices—Micro-electromechanical devices—Bend-and shear-type test methods of measuring adhesive strength for MEMS structures
GB/T 41853-2022
Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement
GB/T 32817-2016
Semiconductor devices—Micro-electromechanical devices—Generic specification for MEMS
GB/T 15529-1995
Blank detail specification for LED numeric displays
GB/T 15449-1995
Blank detail-specification for field-effect transistors for case-rated switching application